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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by Arpes

Designing Topological Phase of Bismuth Halides and Controlling Rashba Effect in Films Studied by Arpes

Noguchi, Ryo

Paperback

Series: Springer Theses

Technology & EngineeringGeneral ComputersPhysics

ISBN10: 9811918767
ISBN13: 9789811918766
Publisher: Springer
Published: Apr 27 2023
Pages: 126
Weight: 0.47
Height: 0.31 Width: 6.14 Depth: 9.21
Language: English

This book presents the observation and the control of spin-polarized electrons in Rashba thin films and topological insulators, including the first observations of a weak topological insulator (WTI) and a higher-order topological insulator (HOTI) in bismuth halides. It begins with a general review of electronic structures at the solid surface and mentions that an electron spin at a surface is polarized due to the Rashba effect or topological insulator states with strong spin-orbit coupling. Subsequently it describes the experimental techniques used to study these effects, that is, angle-resolved photoemission spectroscopy (ARPES). Further it moves its focus onto the experimental investigations, in which mainly two different systems-noble metal thin films with the Rashba effects and bismuth halides topological insulators-are used. The study of the first system discusses the role of wavefunctions in spin-splitting and demonstrates a scaling law for the Rashba effect in quantum well films for the first time. High-resolution spin-resolved ARPES plays a vital role in systematically trace the thickness-evolution of the effect. The study of the latter material is the first experimental demonstration of both a WTI and HOTI state in bismuth iodide and bismuth bromide, respectively. Importantly, nano-ARPES with high spatial resolution is used to confirm the topological surface states on the side surface of the crystal, which is the hallmark of WTIs.

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