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  • Open Daily: 10am - 10pm
    Alley-side Pickup: 10am - 7pm

    3038 Hennepin Ave Minneapolis, MN
    612-822-4611

Open Daily: 10am - 10pm | Alley-side Pickup: 10am - 7pm
3038 Hennepin Ave Minneapolis, MN
612-822-4611
Characterization of the Field Emission Properties of Carbon Nanotube Films Formed on Silicon Carbide Substrates by Surface Decomposition

Characterization of the Field Emission Properties of Carbon Nanotube Films Formed on Silicon Carbide Substrates by Surface Decomposition

Pochet, Michael C.

Paperback

Technology & EngineeringGeneral SciencePhysics

ISBN10: 1288274289
ISBN13: 9781288274284
Publisher: Biblioscholar
Published: Nov 9 2012
Pages: 182
Weight: 0.58
Height: 0.39 Width: 6.14 Depth: 9.21
Language: English

Numerous works found in the literature report that carbon nanotubes have excellent field emission properties, emitting high electron current densities at low electric fields. Recent work by the Air Force Research Laboratory Materials and Manufacturing Directorate has shown that dense arrays of vertically aligned carbon nanotubes (CNTs) form on the surface of silicon carbide wafers during high temperature (1400 - 1700oC) anneals under moderate vacuum conditions (10-2 - 10-5 Torr). The novelty of this growth method is that the carbon nanotubes form without the aid of a metal catalyst, allowing for potentially defect free carbon nanotubes to form. In this thesis, carbon nanotube films were grown by the surface decomposition of silicon carbide substrates and the associated field emission characteristics were investigated to determine if films grown using this method possessed advantages over films grown using metal catalyzed methods.

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